Gallium nitride (GaN) is a compound semiconductor which has advantages to generate new functionalities and applications due to its piezoelectric, pyroelectric, and piezo-resistive properties. Recently, surface acoustic wave (SAW)-based acoustic tweezers were developed as an efficient and versatile tool to manipulate nano- and microparticles …
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In this paper, a gallium nitride (GaN) substrate coated with a single layer of graphene was constructed using molecular dynamics (MD) simulation, and then scratched with a diamond tip under a constant load. The results showed that graphene can improve the abrasion resistance and hardness of the substrate, and reduce surface wear, …
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Gallium nitride (GaN) ... Here, we report the use of PEC etching in fabricating deep trench structures in GaN-on-GaN epilayers with the structures of Schottky barrier diodes (SBDs) and PNDs grown by metal–organic vapor-phase epitaxy (MOVPE) on n-GaN substrates.
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Fabricating high efficiency, high linearity N-polar gallium-nitride (GaN) transistors by selective area regrowth is disclosed. A demand for high efficiency components with highly linear performance characteristics for radio frequency (RF) systems has increased development of GaN transistors and, in particular, aluminum-gallium-nitride …
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III-nitride semiconductors, particularly based on indium and gallium, have long been recognized as some of the most promising materials for a wide range of future electronic and optoelectronic ...
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Gallium nitride (GaN) exhibits high internal spontaneous and piezoelectric polarizations, leading to the formation of a two-dimensional electron gas (2DEG) channel in the …
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Abstract: This paper presents a high-quality single-crystal piezoelectric aluminum nitride (AlN) thin film grown on gallium nitride (GaN) transition layer on sapphire substrate. The Metal-organic Chemical Vapor Deposition (MOCVD) process enables the growth of 500 nm-thick AlN on top of GaN through the rapid exchange of gases in the reactor.
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Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of …
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The fascinating properties of gallium nitride (GaN) such as wide direct band gap nature, ability to tune the band gap, high breakdown voltage, carrier mobility and chemical stability, make GaN a ...
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However, the technology responsible for the blue laser diode that gave the Blu-ray player its name – gallium nitride (GaN) – is emerging as one of a number of exciting new developments in the semiconductor industry.
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Optical engineering of gallium nitride (GaN) semiconductor material has enabled novel applications and technologies. 3D optical engineering is chal- lenging and mostly accomplished by surface ...
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Gallium nitride (GaN), as one direct bandgap semiconductor with excellent optical properties, ... In this work, we develop an effective process for fabricating GaN-based tubular optical microcavities by the rolling of single crystal GaN nanomembranes. The typical photoluminescence spectra of self-rolled up GaN microtube at room …
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Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer (US 5,389,571) This patent by Pioneer Electronics describes a method for fabricating a gallium nitride type semiconductor device comprising of a Silicon substrate, an intermediate layer consisting …
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We report a novel method of fabricating gallium nitride (GaN) nanorods of controllable dimension and density from GaN epitaxial film using inductively coupled plasma reactive ion etching (ICP-RIE). The GaN epitaxial film was grown on a sap-phire substrate by metal-organic chemical vapor deposition.
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Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic devices and systems with higher energy efficiency, higher power density, faster switching, and smaller form factor. In Part I of this review, we have reviewed the basic design …
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Optical engineering of gallium nitride (GaN) semiconductor material has enabled novel applications and technologies. 3D optical engineering is challenging and mostly accomplished by surface ...
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Gallium nitride (GaN) is a material often used to build semiconductor power devices and light emitting diodes (LEDs). In the past, researchers have explored the possibility of realizing GaN p ...
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Gallium nitride (GaN) is a compound semiconductor which has advantages to generate new functionalities and applications due to its piezoelectric, pyroelectric, and piezo-resistive properties.
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Here we report the monolithic integration of enhancement-mode n-channel and p-channel GaN field-effect transistors and the fabrication of GaN-based …
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Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride. Fumimasa Horikiri 1, Hiroshi Ohta 2, Naomi Asai 2, ... These results demonstrate the excellent potential of PEC etching for fabricating deep trenches in vertical GaN devices.
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This work could lead to a new approach to fabricating nitride-based microstructures using wet etching-assisted ultrafast laser processing technologies. Introduction Gallium nitride (GaN) has attracted much attention due to its wide applications in high-power electronic devices and ultraviolet-optical devices [1], [2], [3].
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Gallium nitride-based light-emitting diodes (LEDs) have revolutionized the lighting industry with their efficient generation of blue and green light. While broad-area (square millimetre) devices have become the dominant LED lighting technology, fabricating LEDs into micro-scale pixels (micro-LEDs) y …
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Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. ... The main challenge for fabricating such lines is providing every single LED of the array an individual ...
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Lincoln Laboratory developed fully silicon (Si) CMOS–compatible technologies for gallium nitride (GaN) monolithic microwave integrated circuits (MMICs) on 200-mm-diameter Si wafers. Measured f T and f …
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Gallium nitride (GaN) and related alloys are important semiconductor materials for fabricating novel photonic devices such as ultraviolet (UV) light-emitting diodes (LEDs) and vertical cavity surface-emitting lasers (VCSELs). Recent technical advances have made free-standing GaN substrates available and affordable.
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Before fabricating GaN, gallium oxide peroxide (GaO(OH)) nanorods or amorphous gallium oxide (Ga2O3) particles were fabricated. For the first method, the gallium nitride (Ga(NO3)3) was dissolved into the nitric acid and adjusted pH to approximately 7.
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The WBG Lab focuses on wide-bandgap semiconductors such as Gallium Nitride (GaN), Diamond, Gallium Oxide, and others in the family, to deliver innovative device technologies that can provide solutions for the growing demands for efficiency, versatility, compactness, and robustness in electronics. ... From fabricating devices to our design ...
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Perspectives about growth of bulk gallium nitride crystals, fabricating high structural quality gallium nitride wafers and the market demand for them are presented.
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Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride Fumimasa Horikiri 1 *, Hiroshi Ohta 2, Naomi Asai, Yoshinobu Narita 1, Takehiro Yoshida, and Tomoyoshi Mishima 2
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Gallium nitride (GaN) exhibits high internal spontaneous and piezoelectric polarizations, leading to the formation of a two-dimensional electron gas (2DEG) channel in the heterojunctions. Additionally, its chemical stability, increased electron concentration, and high mobility contribute to its outstanding performance in applications, such as liquid …
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Gallium nitride (GaN) nanoparticles were fabricated with two different fabrication processes based on soft-chemistry methods, and the results were …
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The p-doped layer starts off with pure gallium nitride on the side adjacent to the anode contact. ... he adds, is fabricating a diode that has a layer of pure AlN at the junction, rather than 95 ...
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Implementing selective-area p-type doping through ion implantation is the most attractive choice for the fabrication of GaN-based bipolar power and related devices. However, the low activation ...
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Overall advantageous of Gallium Nitride [4] Gallium nitride (GaN) is a so-called III – V compound semiconductor m aterial with a wide bandgap an d a relatively. high bandgap voltage. Due to its ...
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Perspectives about growth of bulk gallium nitride crystals, fabricating high structural quality gallium nitride wafers and the market demand for them are presented. Three basic crystal growth technologies, halide vapor phase epitaxy, sodium flux, and ammonothermal, are described. Their advantages and disadvantages, recent development, and …
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The utilization of gallium nitride (GaN) in the area of microelectronics continues to increase due to the advantages it offers over other semiconductors. ... The material stack for fabricating the device was grown using N 2 plasma assisted molecular beam epitaxy (Veeco Gen930) on Ga-polarity GaN/sapphire templates (Kyma Inc.). …
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